Users who grumble over their storage device’s inefficacy or snail-like data transfer speed are finally in for a treat. An international research team has interestingly developed new Nanodot based electronic memory that integrates 100x faster data writing and data erasing speed. Although there’s a myriad of storage devices that render blazing fast performance, the latest technology however grabs extra points for performing 10-100 times faster than today’s mainstream charge-storage memory products.
The system benefits from a non-conducting material coating which is merged with distinct silicon nanodots – each around three nano meters. However, every nanodot carries out as a single memory bit. To provide an insight, the said layer has been covered with an emaciated metallic layer which functions as a metal gate and assists in controlling the memory operation.
Subsequent to which, the metal gate takes control over the transistor’s integrated On and Off functions. But if we go by what the researchers have to say, the embedded metal-gate framework is actually the system’s mainstream technology and enables the peripheral to seamlessly data write and data erase numerous discrete nanodots in a simple yet quick way.
As far as the precision and reliability factors are concerned, the data writing and erasure has also been demonstrated utilizing extremely short, clear bursts of green laser light. Developers even believe that this new technology will be enabled to sync neatly with the devices that incorporate support for CMOS technology.
What’s more, the storage solution promises to enhance the experience through utmost stability and robustness. Since low thermal damage is equipped within the chassis, the technology ensures the most seamless and speediest data storage (outweighing almost every mainstream charge-storage memory product in today’s world).
However, the researchers are yet to divulge details on their new nanodot based memory’s pricing and availability.