A team of scientists at IBM’s Zurich Research Laboratory has now come up with a new advancement in computer-based simulations that could set new levels of performance and functionality for chips. Well, they have used supercomputer-based models for the very first time to examine the multifaceted behavior of a hafnium dioxide found in silicon transistors, which are the basic building blocks of computer chips.
In the process of the revolutionary study, the IBM team created more than 50 realistic virtual models of the hafnium silicates with various concentrations of hafnium on the supercomputer. They then simulated the evolution of these structures over a given time period, estimated their dielectric constants and used these results to rationalize experimental findings.
The hafnium dioxide will be the basis for the lately announced “high-k metal gate” technology. IBM will implement the technology in the electronic products in 2008.
Via: Physorg
