World's fastest transistor developed, paves path for terahertz devices
Feng and his research group have designed world's fastest transistor with a speed ranging in terahertz. The device is reported to be 300-gigahertzs faster than the previous transistor that was rated to be the fastest. The transistor utilizes a pseudomorphic grading of the base and collector regions that enhances the electron velocity, hence, reduces both current density and charging time.
The size of the transistor is a major factor in increasing the speed as vertical scaling has made its base just smaller than the width of a human hair and therefore reducing the distance for the electrons to travel.
This transistor, made up of indium phosphide and indium gallium arsenide, can operate at room temperature and its speed increases gradually with the decrease in temperature. The team is still working on reducing certain parameters like junction temperature in order to increase the speed further.
Invention of such a device has made it possible to design more flexible and faster computers and devices.
Via: Physorg
