Samsung's speed buzz, readying 30 nanometer 3-bit, DDR flash memory

With Samsung taking it onto itself, we may soon have two distinct variants of 30 nanometer 3-bit, DDR flash memory knocking onto our hardware zones soon. Samsung has put into production 3-bit Multi-Level Cell NAND memory using 30nm technology, which’ll double the data storage and increase speeds by up three times as compared to its NAND chip predecessors. That means we are talking of a single Multi-Level Cell NAND chip offering about 133Mbps R/W speed instead of the actual 40Mbps of it earlier equivalents. For now these 3-bit chips are only intended for eight GB microSD cards, but that area of usability will increase as the development speeds up.

samsung 30 nanometer 3 bit ddr flash memory

Via: AkihabaraNews