Samsung uncovers its 40nm 32Gbit NAND Flash at KES

Samsung Electronics unveiled World's First 40nm 32Gbit NAND Flash at KES(Korea Electronic Show) 2006. The design of this NAND flash is based on the company's proprietary Charge Trap Flash (CTF) architecture.

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The 32Gb MP3P can save up to 8000 songs with 32Gbit NANd flash in 2008, the time when it will be available in market. The existing 1.8-inch HDDs will be replaced by 128 GB SSD( Solid State Disk).

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The CTF-based NAND flash reduces inter-cell noise levels to a large extent and processing steps by 20 percent compared with those of the floating gate structure. Its single-gate structure also enables high scalability, which will eventually improve manufacturing process technology for delivery of a 256Gbit flash memory based on 20nm design rules, according to Samsung. The40nm 32Gbit NAND Flash will be available in 2008.

The Samsung hopes to generate a total revenue of $ 50 billion in sales revenue from the 40nm NAND business from 2008 to 2012.

Via: Aving

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