For now, we are stuck to the 32 nm or 22 nm structures for the Flash memory but the Korean scientists are now claiming to have developed 10 nm semiconductors based on carbon nanotubes, which will set the new heights for the Flash memory cards.
The new devices are about one-sixth the size of the semiconductors in the 65nm microprocessors and have a tiny size i.e. about 12,000th the width of a human hair. The new 10 nm semiconductors make use of new material dubbed Mott insulator that is able to work both as an insulator and a conductor.
Choi Hee-cheul and Kim Hyun-tak, scientists associated with the study said that ‘flash memory cards one day could store more than 1 billion newspaper pages, translating into a memory capacity of more than 100 GB.’
At present the middle-of-road flash memory cards offer 8GB capacity.
Via: TGdaily
