IBM has revealed its new high-performance eDRAM memory technology at the International Solid State Circuits Conference. The new on-chip memory technology is claimed to tout the fastest access times ever witnessed with eDRAM (Embedded Dynamic Random Access Memory) and will store three times more memory on chips while doubling-up the performance.
IBM is a pioneer in the arena of superconductors. They have given High-k, copper on-chip wiring, silicon-on-insulator and silicon germanium transistors, strained silicon, and eFUSE to the world earlier. The prototype eDRAM contains over 12 million bits and high-performance logic. For your info, the White House has honored IBM with the the National Medal of Technology, which is the nation’s highest technical honor, for 40 years of innovation in semiconductors.
Scheduled for 2008 release, the new technology based on IBM’s 65nm Silicon-on-Insulator (SOI) will enhance the microprocessor performance and graphics motion in media applications.
Via: physorg
